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| sd211de/sst211 series siliconix s-51850erev. f, 14-apr-97 1 n-channel lateral dmos fets sd211de sd213de sd215de sst211 sst213 sst215 product summary part number v (br)ds min (v) v gs(th) max (v) r ds(on) max ( ) c rss max (pf) t on max (ns) sd211de 30 1.5 45 @ v gs = 10 v 0.5 2 sd213de 10 1.5 45 @ v gs = 10 v 0.5 2 sd215de 20 1.5 45 @ v gs = 10 v 0.5 2 sst211 30 1.5 50 @ v gs = 10 v 0.5 2 sst213 10 1.5 50 @ v gs = 10 v 0.5 2 sst215 20 1.5 50 @ v gs = 10 v 0.5 2 features benefits applications ultra-high speed switchinget on : 1 ns ultra-low reverse capacitance: 0.2 pf low guaranteed r ds @ 5 v low turn-on threshold voltage n-channel enhancement mode high speed system performance low insertion loss at high frequencies low transfer signal loss simple driver requirement single supply operation fast analog switch fast sample-and-holds pixel-rate switching dac deglitchers high-speed driver description the sd211de/sst211 series consists of enhancement- mode mosfets designed for high speed low-glitch switching in audio, video, and high-frequency applications. the sd211 may be used for 5-v analog switching or as a high speed driver of the sd214. the sd214 is normally used for 10-v analog switching. these mosfets utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. an integrated zener diode provides esd protection. these devices feature a poly-silicon gate for manufacturing reliability. for similar products see: quad arrayesd5000/5400 series and non-zener protectionesd210de/214de. $
$ & & & g s d to-206af (to-72) body substrate (case) 1 23 4 %#!" " updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70295. applications information may also be obtained via faxback, request document #70607. sd211de/sst211 series 2 siliconix s-51850erev. f, 14-apr-97 absolute maximum ratings (t a = 25 c unless otherwise noted) " " ! 211 211 213 213 215 215 "! 211 211 213 213 215 215 " ! 211 211 213 213 215 215 ! " 211 211 213 213 215 215 "! 211 211 213 213 215 215 ! "! 211 211 15 213 213 215 215 drain current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 o from case for 10 seconds) 300 c . . . . . . . . . storage temperature 65 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature 55 to 125 c . . . . . . . . . . . . . . . . . . power dissipation a 300 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes: a. derate 3 mw/ c above 25 c specifications a limits 211 series 213 series 215 series parameter symbol b test conditions b typ c min max min max min max unit static drain-source bkd vl v (br)ds v gs = v bs = 0 v, i d = 10 a 35 30 breakdown voltage v (br)ds v gs = v bs = 5 v, i d = 10 na 30 10 10 20 source-drain breakdown voltage v (br)sd v gd = v bd = 5 v, i s = 10 na 22 10 10 20 v drain-substrate breakdown voltage v (br)dbo v gb = 0 v, i d = 10 na , source open 35 15 15 v source-substrate breakdown voltage v (br)sbo v gb = 0 v, i s = 10 a , drain open 35 15 15 drain-source lk i ds(off) v gs =v bs = 5v v ds = 10 v 0.4 10 10 leakage i ds(off) v gs = v bs = 5 v v ds = 20 v 0.9 10 source-drain lk i sd(off) v gd =v bd = 5v v sd = 10 v 0.5 10 10 na leakage i sd(off) v gd = v bd = 5 v v sd = 20 v 1 10 gate leakage i gbs v db = v sb = 0 v, v gb = 30v 0.01 100 100 100 threshold voltage v gs(th) v ds = v gs , i d = 1 a v sb = 0 v 0.8 0.5 1.5 0.1 1.5 0.1 1.5 v v gs = 5 v (sd series) 58 70 70 70 v gs = 5 v (sst series) 60 75 75 75 drain-source on resistance r ds ( on ) v sb = 0 v i d = v gs = 10 v (sd series) 38 45 45 45 o n-res i stance r ds(on) i d = v gs = 10 v (sst series) 40 50 50 50 v gs = 15 v 30 v gs = 20 v 26 v gs = 25 v 24 sd211de/sst211 series siliconix s-51850erev. f, 14-apr-97 3 specifications a limits 211 series 213 series 215 series parameter symbol b test conditions b typ c min max min max min max unit dynamic forward g fs v ds = 10 v sd series 11 10 10 10 forward transconductance g fs v ds = 10 v v sb = 0 v i d =20ma f=1khz sst series 10.5 9 9 9 ms transconductance g os i d = 20 ma, f = 1 khz all 0.9 gate node capacitance c (gs+gd+gb) 2.5 3.5 3.5 3.5 drain node capacitance c (gd+db) v ds = 10 v f=1mhz sd series 1.1 1.5 1.5 1.5 pf source node ci c (gs+sb) f = 1 mhz v gs = v bs = 15 v 3.7 5.5 5.5 5.5 pf capacitance c (gs+sb) v gs v bs 15 v sst series 4.2 reverse transfer capacitance c rss sd series 0.2 0.5 0.5 0.5 switching turn - on t ime t d(on) sd s i o l 0.5 1 1 1 t urn- o n t i me t r sd series only v sb = 0 v , v in 0 to 5 v, r g = 25 0.6 1 1 1 ns turn - of f time t d(off) v sb = 0 v , v in 0 to 5 v , r g = 25 v dd = 5 v, r l = 680 2 ns turn - of f t ime t f dd , l 6 notes: a. t a = 25 c unless otherwise noted. dmcba b. b is the body (substrate), and (br) is breakdown. c. typical values are for design aid only, not guaranteed nor subject to production testing. sd211de/sst211 series 4 siliconix s-51850erev. f, 14-apr-97 typical characteristics leakage current vs. applied voltage on-resistance vs. temperature threshold voltage vs. temperature on-resistance vs. gate-source voltage common-source forward transconductance vs. drain current applied voltage (v) 020 i sbo i gss (diode) i d (off) @ v gs = v bg = 5 v i s(off) @ v gd = v bd = 5v i sbo @ v gb = 0 v, drain open 10 na 1 na 100 pa 10 pa 1 pa i s(off) leakage 300 04812 20 240 180 60 0 16 120 5 v 10 v v gs = 4 v 1 100 20 16 12 8 4 0 10 25 c v ds = 15 v v bs = 0 v t a = 55 c 125 c 100 60 60 20 20 100 140 80 60 40 20 0 10 v 15 v 20 v r ds(on) drain-source on-resistance ( 5 60 60 100 20 20 140 4 3 2 1 0 5 v 1 v 0 v v gs = v ds = v th i d = 1 a v bs = 10 v i d = 5 ma, v bs = 0 v 4 8 12 16 t a temperature ( c) t a temperature ( c) i d drain current (ma) g fs forward transconductance (ms) r ds(on) drain-source on-resistance ( v gs = 5 v output conductance vs. drain current 1.0 020 4 0.8 0.6 0.4 0.2 0 v ds = 5 v 15 v v bs = 0 v f = 1 khz i d drain current (ma) g os 81216 output conductance (ms) gate-source threshold voltage (v) v gs(th) v sb body-source voltage (v) i d(off) 10 v 0.5 v sd211de/sst211 series siliconix s-51850erev. f, 14-apr-97 5 typical characteristics (cont'd) threshold voltage vs. substrate-source voltage leakage current vs. temperature input admittance forward admittance capacitance vs. gate-source voltage body leakage current vs. drain-body voltage 5 0 4 20 4 3 2 1 0 h l v gs = v ds = v th i d = 1 ma t a = 25 c 100 10 1 25 50 75 100 125 i sbo i d(off) i s(off) i gss (diode) leakage (na) 10 04 20 8 6 4 2 0 v ds = 10 v, f = 1 mhz v gs = v bs capacitance (pf) c (gs+sb) c (gs+gd+gb) c (gd+db) c (dg) 01216 8 420 v db (v) i d = 13 ma 1 ma body leakage i b 100 10 1 0.1 100 1000 b is g is (ms) v ds = 10 v i d = 10 ma t a = 25 c 100 10 1 0.1 100 1000 (ms) v ds = 10 v i d = 10 ma t a = 25 c g fs b fs t a temperature ( c) v gs gate-source voltage (v) f frequency (mhz) f frequency (mhz) 8 12 16 81216 200 500 200 500 gate-source threshold voltage (v) v gs(th) i d(off) @ v gs = v bs = 5 v, v ds = 10 v i s(off) @ v gd = v bd = 5 v, v sd = 10 v i gss @ v gs = 10 v i sbo @ v sb = 10 v drain open 100 a 100 na 1 na 100 pa 1 pa 10 a 1 a 10 na 10 pa v bs body-source voltage (v) sd211de/sst211 series 6 siliconix s-51850erev. f, 14-apr-97 typical characteristics reverse admittance output admittance switching characteristics output characteristics 1 0.1 0.01 0.001 100 1000 (ms) v ds = 10 v i d = 10 ma t a = 25 c b rs +g rg g rg 100 10 1 0.1 100 1000 (ms) v ds = 10 v i d = 10 ma t a = 25 c 700 600 500 0 01 7 400 300 200 100 23 4 56 t f fall time (ns) r l ( 50 04 20 40 30 20 10 0 4 v 3 v 2 v v bs = 0 v t a = 25 c v gs = 5 v b og g og f frequency (mhz) f frequency (mhz) v ds drain-source voltage (v) drain current (ma) i d 200 500 200 500 81216 switching time test circuit 510 r l 51 v in to scope +v dd v out to scope 0 v 50% 10% 90% t d(on) t d(off) t r t f +5 v 0 v +v dd v in v out input pulse: t d , t r < 1 ns pulse width: 100 ns rep rate: 1 mhz sampling scope t r < 360 ps r in = 1 m c in = 2 pf bw = 500 mhz 50% |
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